IRGPH20M IGBT Transistor 1200V 6.9A by International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR
DESCRIPTION: Insulated Gate Bipolar Transistors (IGBTs) from International
Rectifier have higher usable current densities than comparable bipolar
transistors, while at the same time having simpler gate-drive requirements of the
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high current applications.