MRF581 NPN Silicon High-Frequency Transistor
New Old Stock
FEATURES:
- Designed for high current low power amplifiers up to 1.0 GHz.
- Low Noise (2.0 dB @ 500 MHz)
- Low Intermodulation Distortion
- High Gain
- State–of–the–Art Technology Fine Line Geometry Arsenic Emitters Gold Top Metallization Nichrome Thin–Film Ballasting Resistors
- Excellent Dynamic Range
- Fully Characterized
- High Current–Gain Bandwidth Product
- Collector Current — Continuous: 200mA
- Collector–Emitter Voltage: 18V
- Collector–Base Voltage: 36V
- Emitter–Base Voltage: 2.5V
These parts are new and unused.

