CY7C109-25VC by Cypress Semiconductor Corporation
FUNCTIONAL DESCRIPTION: The CY7C109/CY7C1009 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW chip enable (CE1), an
active HIGH chip enable (CE2), an active LOW output enable
(OE), and three-state drivers. Writing to the device is accomplished
by taking chip enable one (CE1) and write enable (WE)
inputs LOW and chip enable two (CE2) input HIGH. Data on
the eight I/O pins (I/O0 through I/O7) is then written into the
location specified on the address pins (A0 through A16).
Reading from the device is accomplished by taking chip enable
one (CE1) and output enable (OE) LOW while forcing
write enable (WE) and chip enable two (CE2) HIGH. Under
these conditions, the contents of the memory location specified
by the address pins will appear on the I/O pins.
The eight input/output pins (I/O0 through I/O7) are placed in a
high-impedance state when the device is deselected (CE1
HIGH or CE2 LOW), the outputs are disabled (OE HIGH), or
during a write operation (CE1 LOW, CE2 HIGH, and WE LOW).
FEATURES:
- High speed — tAA = 10 ns
- Low active power — 1017 mW (max., 12 ns)
- Low CMOS standby power — 55 mW (max.), 4 mW (Low power version)
- 2.0V Data Retention (Low power version)
- Automatic power-down when deselected
- TTL-compatible inputs and outputs
- Easy memory expansion with CE1, CE2, and OE options
These parts are new and unused -- very nice.
