2SK1365 MOSFET N-Chan 1KV 7A 2-16F1B by Toshiba
FEATURES:
- FET Polarity: N-Channel
- Drain to Source Voltage (Vdss): 1000V (1kV)
- Current - Continuous Drain (Id) @25 Degrees C: 7A
- Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 4A, 10V
- Input Capacitance (Ciss) @ Vds: 1300pF @ 25V
- Power - Max: 90W
- Gate Charge (Qg) @ Vgs: 120nC @ 10V
- Mounting Type: Through hole
These parts are new and unused.
